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AUIRFP4568 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) typ. max. ID 150V 4.8m 5.9m 171A.

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Full PDF Text Transcription for AUIRFP4568 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFP4568. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE AUIRFP4568 Features  Advanced Planar Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repeti...

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c dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) typ. max. ID 150V 4.8m 5.9m 171A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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