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AUIRFR4620 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

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Full PDF Text Transcription for AUIRFR4620 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFR4620. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Repetitive Aval...

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ating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other a

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