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AUIRFR4620 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D G S VDSS RDS(on) typ. max. ID D 200V 64m: 78m: 24A.

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Full PDF Text Transcription for AUIRFR4620 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFR4620. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD - 97681 AUIRFR4620 Features ● ● ● ● ● ● ● ● HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operat...

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s Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S VDSS RDS(on) typ. max. ID D 200V 64m: 78m: 24A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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Brand Logo Part Number Description Manufacturer
Infineon Logo AUIRFR4620 Power MOSFET Infineon

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