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AUTOMOTIVE GRADE
Features Advanced Planar Technology Low On-Resistance P-Channel Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
VDSS RDS(on) ID
AUIRFR5505 AUIRFU5505
max.
-55V 0.
AUIRFR5505 Datasheet
