Datasheet Summary
AUTOMOTIVE GRADE
Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS pliant l Automotive Qualified
- D G
- 96342
AUIRFU5505
HEXFET® Power MOSFET
V(BR)DSS
-55V
RDS(on) max. 0.11Ω
ID -18A
Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...
