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AUIRFR5505 - Power MOSFET

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Key Features

  • l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • D G S D PD - 96342 AUIRFR5505 AUIRFU5505 HEXFET® Power MOSFET V(BR)DSS -55V RDS(on) max. 0.11Ω ID -18A D.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFR5505 Power MOSFET Infineon
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AUIRFR5410 Power MOSFET Infineon
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFR5305 AUTOMOTIVE MOSFET
AUIRFR540Z Power MOSFET
AUIRFR5410 Power MOSFET
AUIRFR024N Power MOSFET
AUIRFR1010Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D G S D PD - 96342 AUIRFR5505 AUIRFU5505 HEXFET® Power MOSFET V(BR)DSS -55V RDS(on) max. 0.11Ω ID -18A D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.