Download the AUIRFSL3107 datasheet PDF.
This datasheet also covers the AUIRFS3107 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Full PDF Text Transcription for AUIRFSL3107 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL3107. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE AUIRFS3107 AUIRFSL3107 Features Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperatu...
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ance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
AUIRFSL3107 Datasheet
