Datasheet4U Logo Datasheet4U.com

AUIRFSL3107 - Power MOSFET

This page provides the datasheet information for the AUIRFSL3107, a member of the AUIRFS3107 Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • AUIRFS3107 AUIRFSL3107 D HEXFET® Power MOSFET G S D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 2.5m: 3.0m: 230A 195A c.

📥 Download Datasheet

Datasheet preview – AUIRFSL3107

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
AUTOMOTIVE GRADE PD - 96394A Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRFS3107 AUIRFSL3107 D HEXFET® Power MOSFET G S D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 2.5m: 3.0m: 230A 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Published: |