Download the AUIRFSL3107 datasheet PDF.
This datasheet also covers the AUIRFS3107 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
AUIRFS3107 AUIRFSL3107
D
HEXFET® Power MOSFET
G S
D
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
75V 2.5m: 3.0m: 230A 195A
c.
Note: The manufacturer provides a single datasheet file (AUIRFS3107_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRFSL3107 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL3107. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD - 96394A Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature ...
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tance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRFS3107 AUIRFSL3107 D HEXFET® Power MOSFET G S D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 2.5m: 3.0m: 230A 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetit
AUIRFSL3107 Datasheet
