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AUIRFSL3607 - Power MOSFET

This page provides the datasheet information for the AUIRFSL3607, a member of the AUIRFS3607 Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

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Datasheet preview – AUIRFSL3607

Datasheet Details

Part number AUIRFSL3607
Manufacturer Infineon
File Size 709.85 KB
Description Power MOSFET
Datasheet download datasheet AUIRFSL3607 Datasheet
Additional preview pages of the AUIRFSL3607 datasheet.
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Full PDF Text Transcription

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AUTOMOTIVE GRADE AUIRFS3607 AUIRFSL3607 Features  Advanced Process Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID 75V 7.34m 9.
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