Download the AUIRFSL3607 datasheet PDF.
This datasheet also covers the AUIRFS3607 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l l
AUIRFS3607 AUIRFSL3607
HEXFET® Power MOSFET
D
Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
G S
VDSS RDS(on) typ. max. ID
D D
75V 7.34m 9.0m 80A
: :.
Note: The manufacturer provides a single datasheet file (AUIRFS3607-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRFSL3607 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL3607. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD - 96402A Features l l l l l l l AUIRFS3607 AUIRFSL3607 HEXFET® Power MOSFET D Advanced Process Technology Low On-Resistance 175°C Operating Temperatur...
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vanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID D D 75V 7.34m 9.0m 80A : : Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRFSL3607 Datasheet
