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AUIRFU5305 - Power MOSFET

This page provides the datasheet information for the AUIRFU5305, a member of the AUIRFR5305 Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

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Datasheet preview – AUIRFU5305

Datasheet Details

Part number AUIRFU5305
Manufacturer Infineon
File Size 511.52 KB
Description Power MOSFET
Datasheet download datasheet AUIRFU5305 Datasheet
Additional preview pages of the AUIRFU5305 datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS RDS(on) ID AUIRFR5305 AUIRFU5305 max. -55V 0.
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