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AUIRFU5305 - Power MOSFET

Download the AUIRFU5305 datasheet PDF. This datasheet also covers the AUIRFR5305 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS -55V 0.065Ω -31A G S RDS(on) max. ID D D.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR5305-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFU5305 Power MOSFET Infineon
AUIRFU540Z Power MOSFET Infineon
AUIRFU5505 Power MOSFET Infineon
AUIRFU120Z Power MOSFET Infineon
AUIRFU4105Z Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFU5305 AUTOMOTIVE MOSFET
AUIRFU540Z Power MOSFET
AUIRFU5505 Power MOSFET
AUIRFU024N Power MOSFET
AUIRFU120Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET® Power MOSFET D Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS -55V 0.065Ω -31A G S RDS(on) max. ID D D Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.