Datasheet4U Logo Datasheet4U.com

AUIRFU5505 - Power MOSFET

This page provides the datasheet information for the AUIRFU5505, a member of the AUIRFR5505 Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • P-Channel.
  • Dynamic dv/dt Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

📥 Download Datasheet

Datasheet preview – AUIRFU5505

Datasheet Details

Part number AUIRFU5505
Manufacturer Infineon
File Size 514.11 KB
Description Power MOSFET
Datasheet download datasheet AUIRFU5505 Datasheet
Additional preview pages of the AUIRFU5505 datasheet.

📁 Similar Datasheet

  • AUIRFU5505 - Power MOSFET (International Rectifier)
  • AUIRFU5305 - AUTOMOTIVE MOSFET (International Rectifier)
  • AUIRFU5305 - Power MOSFET (International Rectifier)
  • AUIRFU540Z - Power MOSFET (International Rectifier)
  • AUIRFU024N - Power MOSFET (International Rectifier)
  • AUIRFU120Z - Power MOSFET (International Rectifier)
  • AUIRFU3607 - Advanced Process Technology (International Rectifier)
  • AUIRFU4104 - Power MOSFET (International Rectifier)
  • AUIRFU4105Z - HEXFET Power MOSFET (International Rectifier)
  • AUIRFU4292 - Power MOSFET (International Rectifier)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  P-Channel  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS RDS(on) ID AUIRFR5505 AUIRFU5505 max. -55V 0.
Published: |