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AUIRFU5505 - Power MOSFET

This page provides the datasheet information for the AUIRFU5505, a member of the AUIRFR5505 Power MOSFET family.

Datasheet Summary

Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.

Features

  • l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • D G S D PD - 96342 AUIRFR5505 AUIRFU5505 HEXFET® Power MOSFET V(BR)DSS -55V RDS(on) max. 0.11Ω ID -18A D.

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AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * D G S D PD - 96342 AUIRFR5505 AUIRFU5505 HEXFET® Power MOSFET V(BR)DSS -55V RDS(on) max. 0.11Ω ID -18A D Description Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area.
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