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AUIRLS8409-7P - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Logic Level Gate Drive.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)     40V 0.50m 0.75m 500A 240A.

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Datasheet Details

Part number AUIRLS8409-7P
Manufacturer Infineon
File Size 273.77 KB
Description Power MOSFET
Datasheet download datasheet AUIRLS8409-7P Datasheet
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Full PDF Text Transcription

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  AUIRLS8409-7P Features  Advanced Process Technology  Logic Level Gate Drive  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)     40V 0.50m 0.75m 500A 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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