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BA779 Datasheet PDF

Infineon Technologies BA779

Silicon PIN Diode

Part No. BA779
Datasheet BA779 Download
Manufacturer
Infineon Technologies
Description Silicon PIN Diode
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BA779 datasheet page 1 preview

MAXIMUM RATINGS

at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Forward current Junction temperature VR 50 V IF 50 mA Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 370 Unit K/W 1 2007-04-19 BA779

ELECTRICAL CHARACTERISTICS

at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 30 V Forward voltage IF = 50 mA IR - - 20 nA VF - - 1.1 V AC Characteristics Diode capacitance CT VR = 0 V, f = 100 MHz VR = 10 V, f = 1 MHz Reverse parallel resistance RP VR = 1 V, f = 100 MHz VR = 0 V, f = 1 GHz Forward resistance rf IF = 1.5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier life time τ rr IF = 10 mA, IR = 6 mA, measured...
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