Vishay BA779
Silicon PIN Diodes
| Part No. | BA779 |
|---|---|
| Datasheet | BA779 Download |
| Manufacturer |  Vishay |
| Description | Silicon PIN Diodes |
| Buy | Stock & Price |
FEATURES
D Wide frequency range 10 MHz to 1 GHzAPPLICATIONS
Current controlled HF resistance in adjustable attenuators 94 8550ABSOLUTE MAXIMUM RATINGS
Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 30 50 125 –55...+125 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/WELECTRICAL CHARACTERISTICS
Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test Conditions IF=20mA VR=30 V f=100MHz, VR=0 f=100MHz, IF=1.5mA f=100MHz, VR=0 IF=10mA, IR=10mA Type Symbol VF IR CD rf zr zr Min Typ Max 1 50 0.5 50 Unit V nA pF W BA779 BA779S t 5 9 4 kW kW ms Document Number 85532 Rev. 3, 01-Apr-99● FaxBack +1-408-970-5600 1 (4) BA779.BA779S Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specif...
