Infineon Technologies BAR66
Silicon PIN Diode Array
| Part No. | BAR66 |
|---|---|
| Datasheet | BAR66 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon PIN Diode Array |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Forward current Total power dissipation Ts ≤ 25 °C ESD contact discharge1) Peak pulse current (tp = 8 / 20 µs)2) Junction temperature VR IF Ptot VESD Ipp Tj 150 V 200 mA 250 mW 25 kV 12 A 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point3), BAR 66 RthJS 1VESD according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected 2Ipp according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected 3For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 290 Unit K/W 1 2011-06-27 BAR66ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 100 V Forward voltage IF = 50 mA Clamping voltage VESD = ± 15 kV (contact)1) IPP = 1...
