Infineon Technologies BAR81W
Silicon RF Switching Diode
| Part No. | BAR81W |
|---|---|
| Datasheet | BAR81W Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon RF Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Forward current IF Total power dissipation Ptot Ts ≤ 138°C Junction temperature Tj Operating temperature range Top Storage temperature Tstg Value 30 100 100 150 -55 ... 125 -55 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 120 Unit V mA mW °C Unit K/W 1 2011-06-14 BAR81...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA IR - - 20 nA VF - 0.93 1 V AC Characteristics Diode capacitance CT VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf IF = 5 mA, f = 100 MHz Charge carrier life time τ rr IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω pF - 0.6 1 - 0.57 0.9 - 0.7 1Ω - 80 - ns I-region width Shunt Insertion loss1) IF =...
