Infineon Technologies BAS3005A
Low VF Schottky Diode
| Part No. | BAS3005A |
|---|---|
| Datasheet | BAS3005A Download |
| Manufacturer |  Infineon Technologies |
| Description | Low VF Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage1) VR Forward current1), TS ≤ 126 °C, BAS3005A-02V IF Average rectified forward current (50/60Hz, sinus) IFAV Repetitive peak forward current (tp ≤ 1 ms, D ≤ 0.25), BAS3005A-02V I FRM Non-repetitive peak surge forward current (t ≤ 10 ms), BAS3005A-02V I FSM Junction temperature Tj Operating temperature range Top Storage temperature Tstg 1For TA > 25 °C the derating of VR and IF has to be considered. Marking 2 Value Unit 30 V 500 mA 500 3.5 A 5 150 °C -55 ...125 -65 ...150 1 2008-02-11 BAS3005A... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit ≤ 80 K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V - - 15 VR = 10 V - - 30 VR = 30 V - - 300 Forward voltage2) VF IF = 1 mA - 200 260 IF = 10 mA - 260 310 IF = 100 mA - 340 390 IF = 200 mA - 370 420 IF = 500 mA - 450 500 Unit µA mVELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max.
