Infineon Technologies BAS3005B
Medium Power AF Schottky Diode
| Part No. | BAS3005B |
|---|---|
| Datasheet | BAS3005B Download |
| Manufacturer |  Infineon Technologies |
| Description | Medium Power AF Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage1) VR RMS reverse voltage Forward current1) VR(RMS) IF Average rectified forward current (50/60Hz, sinus) IFAV Repetitive peak forward current (tp ≤ 1 ms, D ≤ 0.25) IFRM Non-repetitive peak surge forward current (t ≤ 10ms) IFSM Junction temperature Tj Operating temperature range Top Storage temperature Tstg 1 Marking 5B 3 Value Unit 30 V - 500 mA 500 3.5 A 5 150 -55 ...125 -65 ...150 °C 2012-07-02 BAS3005B.... 1For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves. Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Value ≤ 80 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current1) IR µA VR = 5 V - 1 5 VR = 10 V - 2 10 VR = 30 V - 5 25 Forward voltage1)...
