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BAT15-03W Datasheet Single Silicon Rf Schottky Diode

Manufacturer: Infineon

Overview: BAT15-03W Single silicon RF Schottky diode Product.

General Description

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection.

Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

BAT15-03W Distributor