• Part: BAT15-03W
  • Manufacturer: Infineon
  • Size: 371.25 KB
Download BAT15-03W Datasheet PDF
BAT15-03W page 2
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BAT15-03W page 3
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BAT15-03W Description

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.