BAT15-03W Datasheet and Specifications PDF

BAT 15-03W Silicon Schottky Diode • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Or.

Diode capacitance CT 5.5 0.35 pF Ω - VR = 0 , f = 1 MHz Differential forward resistance RF IF 10mA/ 50 mA Semiconductor Group 2 Mar-19-1996 BAT 15-03W Forward Current IF = f(VF) Reverse current IR = f (TA) Diode capacitance CT = f (VR) f = 1MHz Semiconductor Group 3 Mar-19-1996 BAT .

SMD Type Silicon Schottky diode BAT15-03W Diodes Features DBC mixer applications to 12 GHz Low noise figure Low barrier type SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.05 0.3 -0.05 +0.1 1..

DBC mixer applications to 12 GHz Low noise figure Low barrier type SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.05 0.3 -0.05 +0.1 1.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.05 0.1 -0.02 Absolute Maximum Ratings Ta = 25 Parameter Diode reverse voltage Forward current Total power dis.

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction c.

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* Low inductance LS = 1.8 nH (typical)
* Low capacitance C = 0.28 pF (typical) at 1 MHz
* Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm)
* Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/2.