Infineon Technologies BAT60B
Silicon Schottky Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage2) VR Forward current IF Non-repetitive peak surge forward current (t ≤ 10ms) I FSM Value 10 3 5 Unit V A Total power dissipation Ptot 1350 mW TS ≤ 28°C Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1Pb-containing package may be available upon special request 2For TA > 25 °C the derating of VR has to be considered. Ple