Infineon Technologies BAV170
Silicon Low Leakage Diode Array
| Part No. | BAV170 |
|---|---|
| Datasheet | BAV170 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Low Leakage Diode Array |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation TS ≤ 35°C Junction temperature Storage temperature Ptot Tj Tstg Value 80 85 200 4.5 0.5 250 150 -65 ... 150 Unit V mA A mW °C Thermal Resistance Parameter Junction - soldering point2) BAV170 Symbol RthJS Value ≤ 460 Unit K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAV170...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Value
