NXP Semiconductors BAV170
The diodes are in common cathode configuration.| Part No. | BAV170 |
|---|---|
| Datasheet | BAV170 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Low-leakage double diode |
| Buy | Stock & Price |
FEATURES
● Plastic SMD package● Low leakage current: typ. 3 pA
● Switching time: typ. 0.8 µs
● Continuous reverse voltage: max. 75 V
● Repetitive peak reverse voltage: max. 85 V
● Repetitive peak forward current: max. 500 mA.
DESCRIPTION
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. PINNING PIN 1 2 3DESCRIPTION
anode anode common cathode APPLICATION● Low-leakage current applications in surface mounted circuits. MARKING TYPE NUMBER BAV170 MARKING CODE(1) JX* Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. handbook, 4 columns 2 1 Top view 3 21 3 MAM108 Fig.1 Simplified outline (SOT23) and symbol. 2003 Mar 25 2 NXP Semiconductors Low-leakage double diode Product data sheet BAV170 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS Per diode VRRM VR IF IFRM IFSM Ptot Tstg Tj repetitive peak reverse voltage...
