BAV170 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV170 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar 25 NXP Semiconductors Low-leakage double diode Product data sheet Features - Plastic SMD package - Low leakage current: typ. 3 pA - Switching time: typ. 0.8 µs - Continuous reverse voltage: max. 75 V - Repetitive peak reverse voltage: max. 85 V - Repetitive peak forward current: max. 500 mA. DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in mon cathode configuration. PINNING PIN 1 2 3 DESCRIPTION anode anode mon cathode APPLICATION - Low-leakage current...