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BAV170 - Low-leakage double diode

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NXP

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BAV170 Low-leakage double diode by NXP - Datasheet Preview — Datasheet preview – BAV170

Datasheet Details

Part number	BAV170
Manufacturer	NXP
File Size	72.40 KB
Description	Low-leakage double diode
Datasheet	BAV170 Datasheet
Additional preview pages of the BAV170 datasheet.

Product details

Description

Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.

The diodes are in common cathode configuration.

Low-leakage current applications in surface mounted circuits.

Features

Plastic SMD package.
Low leakage current: typ. 3 pA.
Switching time: typ. 0.8 µs.
Continuous reverse voltage: max. 75 V.
Repetitive peak reverse voltage: max. 85 V.
Repetitive peak forward current: max. 500 mA.

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Published: Mar 26, 2005 |