BAV170 Datasheet | Infineon

Silicon Low Leakage Diode Array - Low-leakage applications - Medium speed switching times - Pb-free (RoHS pliant) package1) - Qualified according AEC Q101 BAV170... ! , , Type BAV170 Package SOT23 Configuration mon cathode Marking JXs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation TS ≤ 35°C Junction temperature Storage temperature Ptot Tj Tstg Value 80 85 200 4.5 0.5 250 150 -65 ... 150 Unit V mA A mW °C Thermal Resistance Parameter Junction - soldering point2) BAV170 Symbol...