Infineon Technologies BAW56S
Silicon Switching Diode
| Part No. | BAW56S |
|---|---|
| Datasheet | BAW56S Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation BAW56, TS ≤ 31°C BAW56S, TS ≤ 85°C BAW56T, TS ≤ 104°C BAW56U, TS ≤ 90°C BAW56W, TS ≤ 103°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAW56 BAW56S BAW56T BAW56U BAW56W 1For Symbol VR VRM IF IFS Ptot Value 80 85 200 4.5 330 250 250 250 250 Unit V mA A mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value 360 260 185 240 190 °C Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 Jun-03-2003 BAW56...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. max. DC Characteristics 85 Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF 715 855 1000 1200 1250...
