Nexperia BAW56S
High-speed switching diode
FEATURES AND BENEFITS
● High switching speed: trr ≤ 4 ns● Low capacitance: Cd ≤ 2 pF
● Low leakage current
● Reverse voltage: VR ≤ 90 V
● Very small SMD plastic packages 3.
APPLICATIONS
● High-speed switching● General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C Min Typ Max Unit - - 0.5 µA - - 90 V - - 4 ns Nexperia BAW56S High-speed switching diode 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 A3; A4 common anode (diode 3 and diode 4) 4 K3 cathode (diode 3) 5 K4 cathode (diode 4) 6 A1; A2 common anode (diode 1 and diode 2) Simplified outline 654 123 TSSOP6 (SOT363) Graphic symbol A1;A2 K4 K3 K1 K2 A1;A2 006aab102 6. Ordering information Table 3. Ordering information Type number Package Name BAW56S TSSOP6DESCRIPTION
Version plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363 2.1 mm x 1.25 mm x 0.95 mm body 7.