Infineon Technologies BB804
Silicon Variable Capacitance Diode
| Part No. | BB804 |
|---|---|
| Datasheet | BB804 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 18 20 50 -55 ... 125 -55 ... 150 V mA °C 1 Nov-07-2002 BB804...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 65 °C AC Characteristics Diode capacitance1) VR = 2 V, f = 1 MHz CT CT2 /CT8 rS Q TCC Unit max. nA 20 200 typ. - IR - 42 1.65 - 1.71 0.18 200 330 47.5 - pF Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Figure of merit f = 100 MHz, VR = 2 V Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz 1 ppm/K Capacitance groups at 2V , coded 1; 2 ; 3 CT/groups 1 2 3 C2V C2V min max 43pF 44.5pF 44pF 45.5pF 45pF 46.5pF The capacitance subgroup is marked by the subgroup number printed on the component and the package label.
