Vishay BB804
Silicon Epitaxial Planar Dual Capacitance Diode
| Part No. | BB804 |
|---|---|
| Datasheet | BB804 Download |
| Manufacturer |  Vishay |
| Description | Silicon Epitaxial Planar Dual Capacitance Diode |
| Buy | Stock & Price |
FEATURES
D Common cathodeAPPLICATIONS
Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550ABSOLUTE MAXIMUM RATINGS
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V,8V, f=100MHz CD=38pF, f=100MHz CD=38pF, f=100MHz Type Symbol Min IR IR CD 42 CD 42 CD 43 CD 44 CD 45 CD 46 CD2/ CD8 1.65 rs Q 100 Typ Max 20 0.2 47.5 43.5 44.5 45.5 46.5 47.5 1.75 0.4 Unit nA mA pF pF pF pF pF pF Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 100 –55...+150 Unit V V mA °C °C Group 0 Group 1 Group 2 Group 3 Group 4 Capacitance ratio Series resistance Figure of merit 1) 0.3 140 W A packing unit (reel) contains diodes from one capacitance group only. Delivery of single capacitance groups available only on request.
