Infineon Technologies BB814
Silicon Variable Capacitance Diodes
| Part No. | BB814 |
|---|---|
| Datasheet | BB814 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltageForward current Operating temperature range Storage temperature VR VRM IF Top Tstg Value 18 20 50 -55 ... 125 -55 ... 150 Unit V mA °C 1 Dec-04-2002 BB814...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 60 °C AC Characteristics Diode capacitance1) VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz CT Unit max. nA typ. IR 20 200 pF 43 19.1 44.75 20.8 2.15 0.18 200 46.5 22.7 2.25 3 % Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2 /CT8 2.05 - Capacitance matching2) VR = 2 V, VR = 8 V, f = 1 MHz CT/CT rS Q Series resistance VR = 2 V, f = 100 MHz Q factor f = 100 MHz, VR = 2 V 1Capacitance CT/groups C2V C2V C8V C8V 2For groups at 2V and 8V, coded 1; 2 1 2 43pF 45pF 19.1pF 44.5pF 46.5pF 19.75pF min max min max 21.95pF 22.7pF details please refer to Application Note 047. 2 Dec-04-2002 BB814...
