Vishay BB814
Silicon Epitaxial Planar Dual Capacitance Diode
FEATURES
D Common cathodeAPPLICATIONS
Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios 94 8550ABSOLUTE MAXIMUM RATINGS
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °CELECTRICAL CHARACTERISTICS
Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance 1) Type Group 1 Group 2 Group 1 Group 2 VR=2V,8V, f=1MHz CD=38pF, f=100MHz Symbol Min IR IR CD 43 CD 44.5 CD 19.1 CD 19.75 CD2/ CD8 2.05 rs Typ Max 20 200 45 46.5 21.95 22.70 2.25 0.5 Unit nA nA pF pF pF pF W In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%. Document Number 85555 Rev. 3, 01-Apr-99● FaxBack +1-408-970-5600 1 (3) BB814 Vishay Telefunken Dimensions in mm 14384 top view 14387
● FaxBack +1-408-970-5600 2 (3) Document Number 85555 Rev.