Infineon Technologies BC807U
PNP Silicon Transistor
| Part No. | BC807U |
|---|---|
| Datasheet | BC807U Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking 5Bs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 45 50 5 500 1 100 200 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 115 °C Junction temperature Storage temperature mA A mA mW °C Thermal Resistance Junction - soldering point 1) RthJS 105 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC807UELECTRICAL CHARACTERISTICS
at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current...
