Infineon Technologies BC808W
PNP Silicon AF Transistors
| Part No. | BC808W |
|---|---|
| Datasheet | BC808W Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Symbol VCEO VCBO VEBO BC 807W 45 50 5 500 1 100 200 250 150 BC 808W 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 80 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC807W, BC808WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0...
