BC808W
BC807W / BC808W
PNP Silicon Epitaxial Planar Transistors for general purpose and switching applications
These transistors are subdivided into three groups
- 16, -25, -40 according to their current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
HEmitter Base Voltage
BC807W BC808W BC807W BC808W
CCollector Current
Peak Collector Current
EPeak Base Current
Power Dissipation
TThermal Resistance , Junction to Ambient
Junction Temperature
MStorage Temperature Range SE1) Transistor mounted on an FR4 printed-circuit board.
Symbol -VCBO
-VCEO -VEBO
-IC -ICM -IBM Ptot RθJA TJ Tstg
Value 50 30 45 25 5
200 200 625 1)
-65 to +150
Unit V
V V m A A m A m W K/W OC OC
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited ®
Dated : 23/02/2006
BC807W / BC808W
Characteristics at Tamb = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain at -VCE = 1 V, -IC = 100 m A at -VCE = 1 V, -IC = 500 m...
