Infineon Technologies BC817U
NPN Silicon Transistor
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 115 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 45 50 5 500 1000 100 200 330 150 -65 ... 150 Unit V mA mW °C 1 2011-09-20 BC817U Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 105 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise