Infineon Technologies BC846AW
NPN Silicon AF Transistors
| Part No. | BC846AW |
|---|---|
| Datasheet | BC846AW Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC846W BC847W BC848W Unit BC850W BC849W 65 80 80 6 45 50 50 6 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V Thermal Resistance Junction - soldering point 1) RthJS Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848/849W 105 Values typ. max. K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Unit V(BR)CEO V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848/849W V(BR)CBO 80 50 30 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC846W...BC850WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified.
