Infineon Technologies BCP54
NPN Silicon AF Transistors
| Part No. | BCP54 |
|---|---|
| Datasheet | BCP54 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage BCP54 BCP55 BCP56 Symbol VCEO Value 45 60 80 Collector-base voltage BCP54 BCP55 BCP56 VCBO 45 60 100 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C VEBO 5 IC 1 ICM 1.5 IB 100 IBM 200 Ptot 2 Junction temperature Tj 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP54...-BCP56...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCP54... IC = 10 mA, IB = 0 , BCP55... IC = 10 mA, IB = 0 , BCP56-10, -16 V(BR)CEO 45 - 60 - 80 - V - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCP54... IC = 100 µA, IE = 0 , BCP55...
