Infineon Technologies BCP69
PNP Silicon AF Transistor
MAXIMUM RATINGS
Parameter Marking BCP 69 1=B BCP 69-10 1 = B BCP 69-16 1 = B BCP 69-25 1 = B Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 Symbol VCEO VCES VCBO VEBO Values 20 25 25 5 1 2 100 200 1.5 150 -65 ... 150 Unit V V V A mA W °C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP69ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base...