Infineon Technologies BCR169
PNP Silicon Digital Transistor
| Part No. | BCR169 |
|---|---|
| Datasheet | BCR169 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR169, TS ≤ 102°C BCR169F, TS ≤ 128°C BCR169L3, TS ≤ 135°C BCR169S, T S ≤ 115°C BCR169T, TS ≤ 109°C BCR169U, TS ≤ 118°C BCR169W, TS ≤ 124°C SEMB3, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR169 BCR169F BCR169L3 BCR169S BCR169T BCR169U BCR169W SEMB3 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 May-18-2004 BCR169.../SEMB3ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-ba...
