Siemens BCR169
PNP Silicon Digital Transistor
| Part No. | BCR169 |
|---|---|
| Datasheet | BCR169 Download |
| Manufacturer |  Siemens |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 200 150 - 65 ... + 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 169ELECTRICAL CHARACTERISTICS
at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 4.7 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector cutoff current ICBO 100 nA 120 630 V 0.3 0.8 1.1 6.2 kΩ VCB = 40 V, IE = 0 DC current gain hFE VCEsat Vi(off) 0.4 IC = 5 mA, VCE = 5 V Collector-emitte...
