Infineon Technologies BCR192U
PNP Silicon Digital Transistor Array
| Part No. | BCR192U |
|---|---|
| Datasheet | BCR192U Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor Array |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking WPs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 30 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 118 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 1) RthJS 130 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 BCR192UELECTRICAL CHARACTERISTICS
at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1 /R2 Vi(on) Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO typ. max.
