Infineon Technologies BCV49
NPN Silicon Darlington Transistors
| Part No. | BCV49 |
|---|---|
| Datasheet | BCV49 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon Darlington Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage BCV29 BCV49 Collector-base voltage BCV29 BCV49 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 130 °C Junction temperature Storage temperature Pin Configuration 1=B 2=C 3=E 1=B 2=C 3=E Package SOT89 SOT89 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 30 60 40 80 10 500 800 100 200 1 150 -65 ... 150 Unit V mA W °C 1 2011-10-05 BCV29, BCV49 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 20 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCV29 IC = 10 mA, IB = 0 , BCV49 V(BR)CEO 30 60 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCV29 IC = 100 µA, IE = 0 , BCV49...
