Siemens BCV49
NPN Silicon Darlington Transistors
| Part No. | BCV49 |
|---|---|
| Datasheet | BCV49 Download |
| Manufacturer |  Siemens |
| Description | NPN Silicon Darlington Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCV 29 VCE0 VCB0 VEB0 IC ICM IB IBM P1tot Tj Tstg 30 40 10 Values BCV 49 60 80 10 500 800 100 200 1 150 – 65 … + 150 Unit V mA W ˚C 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 29 BCV 49ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 29 BCV 49 Collector-base breakdown voltage IC = 100 µA BCV 29 BCV 49 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB =...
