Infineon Technologies BCV61
NPN Silicon Double Transistor
| Part No. | BCV61 |
|---|---|
| Datasheet | BCV61 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon Double Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage (transistor T1) Symbol VCEO Value 30 Collector-base voltage (open emitter) (transistor T1) VCBO 30 Emitter-base voltage DC collector current Peak collector current, tp < 10 ms Base peak current (transistor T1) Total power dissipation, TS = 99 °C Junction temperature Storage temperature VEBS IC ICM IBM Ptot Tj Tstg 6 100 200 200 300 150 -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤170 1For calculation of RthJA please refer to Application Note AN077 (Thermal
