Infineon Technologies BCW68G
PNP Transistor
MAXIMUM RATINGS
Parameter Symbol Value Collector-emitter voltage BCW67 BCW68 VCEO 32 45 Collector-base voltage BCW67 BCW68 VCBO 45 60 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipation, TS ≤ 79°C Junction temperature VEBO 5 IC 800 ICM 1 IB 100 IBM 200 Ptot 330 Tj 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCW67 IC = 10 mA, IB = 0 , BCW68 V(BR)CEO 32 - - 45 - - Collector-base breakdown voltage IC = 10 µA, IE = 0 , BCW67 IC = 10 µA, IE = 0 , BCW68 V(BR)CBO 45 - - 60 - - Emitter-base breakdown voltage...