BCW68G Datasheet PDF

MAXIMUM RATINGS

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO
●c BCW67 BCW68 32 45 45 60 5.0 800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol
●Total Device ADissipation, T = 25°C Derate above 25°C PD Storage Temperature T stg
●Thermal Resistance Junction to Ambient RflJA
●Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Max 350 2.8 150 357 Unit mW mW/°C °C °C/W BCW67,A,B,C BCW68,F,G CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage C(I = 10 mAdc, Ib = 0) BGW67 Series BCW68 Series Collector-Emitter Breakdown Voltage c(l = 10/xAdc, VE b = 0) BCW67 Series BCW68 Series Emitter-Base Breakdown Voltage E(l = 10 fiAdc, lc = 0) Collector Cutoff Current (Vqe = 32 Vdc, Ie = 0) (Vce = 45 Vd