Datasheet4U Logo Datasheet4U.com

BCW68G - Transistor

Download the BCW68G datasheet PDF. This datasheet also covers the BCW67 variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BCW67-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO •c BCW67 BCW68 32 45 45 60 5.0 800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol •Total Device ADissipation, T = 25°C Derate above 25°C PD Storage Temperature T stg •Thermal Resistance Junction to Ambient RflJA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Max 350 2.8 150 357 Unit mW mW/°C °C °C/W BCW67,A,B,C BCW68,F,G CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.