BCW61BLT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW61BLT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW61BLT1 BCW61CLT1 BCW61DLT1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value - 32 - 32 - 5.0 - 100 2 EMITTER Unit Vdc Vdc Vdc m Adc 1 2 CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C DEVICE MARKING BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = - 2.0 m Adc, IB = 0) Emitter - Base Breakdown Voltage (IE = - 1.0 m Adc, IC = 0) Collector Cutoff Current (VCE = - 32 Vdc) (VCE = - 32 Vdc, TA = 150°C) 1. FR- 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES - - -...