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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW61A BCW61B BCW61C BCW61D
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P silicon transistors
Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f: 100 MHz
–VCE = 5 V; –IC = 10 mA Noise figure at f = 1 kHz
–VCE = 5 V; –IC = 200 mA
–VCES –VCEO –IC Ptot Tj
max. max. max. max. max.
32 V 32 V 200 mA 250 mW 150 °C
fT typ. 180 MHz
F typ.
BCW61B Datasheet
