BCW61B Datasheet | Continental Device India

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P- N- P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector- emitter voltage (VBE = 0) Collector- emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f: 100 MHz - VCE = 5 V; - IC = 10 m A Noise figure at f = 1 k Hz - VCE = 5 V; - IC = 200 m A - VCES - VCEO - IC Ptot Tj max. max. max. max. max. 32 V 32 V 200 m A 250 m W 150 °C f T typ. 180 MHz F typ. 2 d B Continental Device India Limited Data Sheet Page 1 of 3 BCW61A BCW61B BCW61C BCW61D RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector- emitter voltage (VBE = 0) Collector- emitter voltage (open base) Emitter- base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature - VCES - VCE0 - VEB0 - IC - l B Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 m A max. 50 m A max. 250 m W - 55 to +150 °C max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j- a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector- emitter cut- off current VEB = 0; - VCE = 32 V VEB = 0; - VCE = 32 V; Tamb = 150 °C Emitter- base cut- off current IC =...