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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW60A BCW60B BCW60C BCW60D
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; IC = 200 mA; B = 200Hz
VCES VCE0 IC Ptot Tj fT F
max. max. max. max. max. typ. typ.